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New quaternary Si-B-C-N films prepared by reactive magnetron sputtering

Citace: [] VLČEK, J., POTOCKÝ, Š., HOUŠKA, J., ZEMAN, P., PEŘINA, V., SETSUHARA, Y. New quaternary Si-B-C-N films prepared by reactive magnetron sputtering. Tokyo, 2005.
Druh: PŘEDNÁŠKA, POSTER
Jazyk publikace: eng
Anglický název: New quaternary Si-B-C-N films prepared by reactive magnetron sputtering
Rok vydání: 2005
Místo konání: Tokyo
Autoři: Jaroslav Vlček , Štěpán Potocký , Jiří Houška , Petr Zeman , Vratislav Peřina , Yuichi Setsuhara
Abstrakt EN: A systematic investigation of reactive magnetron sputtering of new quaternary Si-B-C-N materials has been carried out. The Si-B-C-N films were deposited on p-type Si substrates by dc magnetron co-sputtering using a single C-Si-B target in nitrogen-argon gas mixtures. Elemental compositions of the films, their bonding structure, and mechanical, tribological and optical properties, together with their oxidation resistance in air, were controlled by the Si fraction in the magnetron target erosion area, the Ar fraction in the gas mixture, the rf induced negative substrate bias voltage and the substrate temperature.
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