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Influence of substrate bias voltage on the mechanical properties of Si-B-C-N films prepared by reactive magnetron sputtering

Citace: [] HOUŠKA, J., VLČEK, J., POTOCKÝ, Š., ČÍŽEK, J., SOUKUP, Z., PEŘINA, V. Influence of substrate bias voltage on the mechanical properties of Si-B-C-N films prepared by reactive magnetron sputtering. In JUNIORMAT '03. Brno: University of Technology, 2003. s. 20-23. ISBN: 80-214-2462-1
Druh: STAŤ VE SBORNÍKU
Jazyk publikace: eng
Anglický název: Influence of substrate bias voltage on the mechanical properties of Si-B-C-N films prepared by reactive magnetron sputtering
Rok vydání: 2003
Místo konání: Brno
Název zdroje: University of Technology
Autoři: Jiří Houška , Jaroslav Vlček , Štěpán Potocký , Jiří Čížek , Zbyněk Soukup , Vratislav Peřina
Abstrakt EN: The new quaternary Si-B-C-N materials attract great interest due to their potential applications in coating technologies and microelectronics. These material s can posses a useful set of properties, such as very high hardness, extremely high temperature resistance, chemical inertness, a wide optical transparency window and wide band gap characteristics. Various deposition techniques, mostly based on a chemical vapour deposition at elevated temperatures or on a polymer precursor pyrolysis, were used to prepare amorphous or crystalline Si-B-C-N ceramics. In our experiments we have used the reactive magnetron sputtering, one of the most versatile techniques compatible with semiconductor technologies. Its further important advantages are an easy up-scaling and lower deposition temperatures, which are often desirable for practical applications.
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