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Self-texture control of ZnO films prepared by reactive RF magnetron sputtering

Citace: NOVÁK, P., ŠUTTA, P., NETRVALOVÁ, M., ŘÍHA, J., MEDLÍN, R. Self-texture control of ZnO films prepared by reactive RF magnetron sputtering. Praha, 2013.
Druh: PŘEDNÁŠKA, POSTER
Jazyk publikace: eng
Anglický název: Self-texture control of ZnO films prepared by reactive RF magnetron sputtering
Rok vydání: 2013
Autoři: Ing. Petr Novák Ph.D. , Doc. RNDr. Pavol Šutta Ph.D. , Ing. Marie Netrvalová Ph.D. , Ing. Jan Říha Ph.D. , Ing. Rostislav Medlín
Abstrakt EN: Zinc Oxide (ZnO) is a wide bandgap semiconductor material which can be successfully used for wide variety of potential applications such as biosensors and acoustic resonator devices. ZnO normally crystallizes in the wurtzite structure with c-axis (001) preferred orientation. Nevertheless, for bio/sensing in liquids, it is necessary to generate a shear horizontal mode wave, where the wave displacement is within the plane of the crystal surface. For generation of such a shear horizontal wave, a-axis film textures such as the (110) or (100) is necessary. The work was focused on the preferred orientation control of ZnO film prepared by RF magnetron sputtering. It was found that preferred orientation can be cotrol by substrate bias and temperature without the use of expensive crystalline substrates. There are three areas of operating parameters when the structure of the ZnO films is dominated by diferrent preferred orientation. Moreover, the film annealing was performed to enhance the film structure.
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