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Effect of chemical order on the magnetic and electronic properties of epitaxial off-stoichiometry Fex Si1−x thin films

Citace:
KAREL, J., JURASZEK, J., MINÁR, J., BORDEL, C., STONE, K., ZHANG, Y., HU, J., WU, R., EBERT, H., KORTRIGHT, J., HELLMAN, F. Effect of chemical order on the magnetic and electronic properties of epitaxial off-stoichiometry Fex Si1?x thin films. Physical Review B, 2015, roč. 91, č. 14, s. \´1444024-1\´- \´1444024-9\´. ISSN: 1098-0121
Druh: ČLÁNEK
Jazyk publikace: eng
Anglický název: Effect of chemical order on the magnetic and electronic properties of epitaxial off-stoichiometry Fex Si1?x thin films
Rok vydání: 2015
Autoři: J. Karel , J. Juraszek , Doc.Dr. Jan Minár , C. Bordel , K.H. Stone , Y.N. Zhang , J. Hu , R.Q. Wu , H. Ebert , J.B. Kortright , F. Hellman
Abstrakt EN: Off-stoichiometry, epitaxial Fex Si1?x thin films (0.5 < x < 1.0) exhibit D03 or B2 chemical order, evennfar from stoichiometry. Theoretical calculations show the magnetic moment is strongly enhanced in the fullynchemically disordered A2 phase, while both theoretical and experimental results show that the magnetization isnnearly the same in the B2 and D03 phases, meaning partial chemical disorder does not influence the magnetism.nThe dependencies of the magnetic moments are directly and nonlinearly linked to the number of Si atoms,nprimarily nearest neighbor but also to a lesser extent (up to 10%) next nearest neighbor, surrounding Fe,nexplaining the similarities between B2 and D03 and the strong enhancement for the A2 structure. The calculatednelectronic density of states shows many similarities in both structure and spin polarization between the D0 3 andnB2 structures, while the A2 structure exhibits disorder broadening and a reduced spin polarization.
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